Inhomogeneous distribution of defect-related emission in...

Journal of Applied Physics 2014 / 02 Vol. 115; Iss. 5

Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

Kurai, Satoshi, Ushijima, Fumitaka, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi
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Volume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4864020
Date:
February, 2014
File:
PDF, 1.64 MB
english, 2014
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