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Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition
Soga, Tetsuo, Hattori, Shuzo, Sakai, Shiro, Takeyasu, Masanari, Umeno, MasayoshiVolume:
57
Year:
1985
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.335363
File:
PDF, 588 KB
english, 1985