Characterization of field-effect transistors with La[sub...

Journal of Applied Physics 2006 Vol. 99; Iss. 2

Characterization of field-effect transistors with La[sub 2]Hf[sub 2]O[sub 7] and HfO[sub 2] gate dielectric layers deposited by molecular-beam epitaxy

Rittersma, Z. M., Hooker, J. C., Vellianitis, G., Locquet, J.-P., Marchiori, C., Sousa, M., Fompeyrine, J., Pantisano, L., Deweerd, W., Schram, T., Rosmeulen, M., De Gendt, S., Dimoulas, A.
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Volume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2163985
File:
PDF, 671 KB
english, 2006
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