Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2010 Vol. 28; Iss. 6
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Quantifying reaction spread and x-ray exposure sensitivity in hydrogen silsesquioxane latent resist patterns with x-ray spectromicroscopy
Caster, Allison G., Kowarik, Stefan, Schwartzberg, Adam M., Leone, Stephen R., Tivanski, Alexei, Gilles, Mary K.Volume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3514124
File:
PDF, 996 KB
english, 2010