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Plasma ion implantation of nitrogen into silicon: Characterization of the depth profiles of implanted ions
Vajo, John J., Williams, John D., Wei, Ronghua, Wilson, Robert G., Matossian, Jesse N.Volume:
76
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.357072
File:
PDF, 1.63 MB
english, 1994