[IEEE 2010 IEEE International Electron Devices Meeting...

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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

Chih-Chieh Yeh,, Chih-Sheng Chang,, Hong-Nien Lin,, Wei-Hsiung Tseng,, Li-Shyue Lai,, Tsu-Hsiu Perng,, Tsung-Lin Lee,, Chang-Yun Chang,, Liang-Gi Yao,, Chia-Cheng Chen,, Ta-Ming Kuan,, Xu,
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Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703473
File:
PDF, 140 KB
english, 2010
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