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Theoretical analysis of channel-doped amorphous silicon field-effect transistors
Lin, Jyh-Ling, Sah, Wen-Jyh, Lee, Si-ChenVolume:
68
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.346703
File:
PDF, 778 KB
english, 1990