Interfacial oxide growth at silicon∕high-k oxide...

Journal of Applied Physics 2006 Vol. 100; Iss. 4

Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO[sub 2] interface

Hakala, M. H., Foster, A. S., Gavartin, J. L., Havu, P., Puska, M. J., Nieminen, R. M.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2259792
File:
PDF, 1.06 MB
english, 2006
Conversion to is in progress
Conversion to is failed