Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells
Mintairov, A M, Sun, K, Merz, J L, Yuen, H, Bank, S, Wistey, M, Harris, J S, Peake, G, Egorov, A, Ustinov, V, Kudrawiec, R, Misiewicz, JVolume:
24
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/24/7/075013
Date:
July, 2009
File:
PDF, 414 KB
english, 2009