Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors
Sadana, D. K., Acovic, A., Davari, B., Grutzmacher, D., Hanafi, H., Cardone, F.Volume:
61
Year:
1992
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.108002
File:
PDF, 595 KB
english, 1992