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Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
Zhu, Y., Jain, N., Vijayaraghavan, S., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, W. K., Monsegue, N., Hudait, M. K.Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4737462
File:
PDF, 4.45 MB
english, 2012