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An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes
Wang, Jiaxing, Wang, Lai, Wang, Lei, Hao, Zhibiao, Luo, Yi, Dempewolf, Anja, Müller, Mathias, Bertram, Frank, Christen, JürgenVolume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4736591
File:
PDF, 2.55 MB
english, 2012