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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - An analytic threshold voltage model for the double-gate Schottky-Barrier source/drain MOSFETs
Li, Peicheng, Hu, Guangxi, Mei, Guanghui, Liu, Ran, Yi Jiang,, Tang, TingaoYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667786
File:
PDF, 503 KB
english, 2010