Chemical trends in ground- and excited-state properties of...

Physical Review B 1985 / 6 Vol. 31; Iss. 12

Chemical trends in ground- and excited-state properties of interstitial 3d impurities in silicon

Katayama-Yoshida, H., Zunger, Alex
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Volume:
31
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.31.8317
Date:
June, 1985
File:
PDF, 314 KB
english, 1985
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