Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2010 Vol. 28; Iss. 6
Relaxation of misfit strain in silicon-germanium (Si[sub 1−x]Ge[sub x]) films during dry oxidation
Yoo, Jung-Ho, Kim, Sun-Wook, Min, Byoung-Gi, Sohn, Hyunchul, Ko, Dae-Hong, Cho, Mann-HoVolume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3516014
File:
PDF, 564 KB
english, 2010