Admittance of Al/GaAs Schottky contacts under forward bias...

Applied Physics Letters 1991 Vol. 58; Iss. 2

Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditions

Muret, P., Elguennouni, D., Missous, M., Rhoderick, E. H.
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Volume:
58
Year:
1991
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.104958
File:
PDF, 607 KB
english, 1991
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