[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications
Buchanan, D.A., Gusev, E.P., Cartier, E., Okorn-Schmidt, H., Rim, K., Gribelyuk, M.A., Mocuta, A., Ajmera, A., Copel, M., Guha, S., Bojarczuk, N., Callegari, A., D'Emic, C., Kozlowski, P., Chan, K., FYear:
2000
Language:
english
DOI:
10.1109/iedm.2000.904297
File:
PDF, 401 KB
english, 2000