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Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon
Londos, C. A., Andrianakis, A., Sgourou, E. N., Emtsev, V., Ohyama, H.Volume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3391127
File:
PDF, 489 KB
english, 2010