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Diffusion in Silicon. III. Generation of Excess Vacancies at Climbing Diffusion-Induced Dislocations, and Dislocation-Enhanced Diffusion in (001) Crystals
Parker, T. J.Volume:
39
Year:
1968
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1656486
File:
PDF, 637 KB
english, 1968