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Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress
Portavoce, A., Gas, P., Berbezier, I., Ronda, A., Christensen, J. S., Svensson, B.Volume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1781767
File:
PDF, 417 KB
english, 2004