Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2013 Vol. 31; Iss. 3
![](/img/cover-not-exists.png)
Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics
Kim, Jonggi, Mok, In-Su, Kim, Youngjae, Lee, Kyumin, Ko, Dae-Hong, Sohn, HyunchulVolume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4806766
File:
PDF, 1.10 MB
english, 2013