Effect of chemical bonding states in TaOx base layers on...

Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

Kim, Jonggi, Mok, In-Su, Kim, Youngjae, Lee, Kyumin, Ko, Dae-Hong, Sohn, Hyunchul
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Volume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4806766
File:
PDF, 1.10 MB
english, 2013
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