Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2013 Vol. 31; Iss. 1
Ion implantation synthesis and conduction of tantalum oxide resistive memory layers
Bishop, Seann M., Briggs, Benjamin D., Rice, Phillip Z., Capulong, Jihan O., Bakhru, Hassaram, Cady, Nathaniel C.Volume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4771987
File:
PDF, 1.79 MB
english, 2013