Electrically active point defects in n-type 4H–SiC

Doyle, J. P., Linnarsson, M. K., Pellegrino, P., Keskitalo, N., Svensson, B. G., Schöner, A., Nordell, N., Lindström, J. L.

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Volume:

Year:

1998

Language:

english

Journal:

Journal of Applied Physics

DOI:

10.1063/1.368247

File:

PDF, 324 KB

english, 1998

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