Growth of crack-free GaN films on Si(111) substrate by...

Journal of Applied Physics 2004 Vol. 96; Iss. 9

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

Lu, Yuan, Cong, Guangwei, Liu, Xianglin, Lu, Da-Cheng, Zhu, Qinsheng, Wang, Xiaohui, Wu, Jiejun, Wang, Zhanguo
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Volume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1787588
File:
PDF, 771 KB
english, 2004
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