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Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
Merckling, C., Waldron, N., Jiang, S., Guo, W., Collaert, N., Caymax, M., Vancoille, E., Barla, K., Thean, A., Heyns, M., Vandervorst, W.Volume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4862044
Date:
January, 2014
File:
PDF, 2.04 MB
english, 2014