Gate voltage induced topological phase transition in...

Applied Physics Letters 2013 Vol. 102; Iss. 2

Gate voltage induced topological phase transition in hexagonal boron-nitride bilayers

Zhai, Xuechao, Jin, Guojun
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Volume:
102
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4775689
File:
PDF, 1.32 MB
english, 2013
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