[IEEE 2010 10th IEEE International Conference on...

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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A 5V/200V SOI device with a vertically linear graded drift region

Yang, Shao-Ming, Lin, Yin-Huang, Sheu, Gene, Tasi, Jung-Ruey, Tu, Shang-Hui, Chin, Yu-Lung, Jin-Shyong Jan,, Lee, Chia-Hao
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Year:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667702
File:
PDF, 717 KB
english, 2010
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