[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A 5V/200V SOI device with a vertically linear graded drift region
Yang, Shao-Ming, Lin, Yin-Huang, Sheu, Gene, Tasi, Jung-Ruey, Tu, Shang-Hui, Chin, Yu-Lung, Jin-Shyong Jan,, Lee, Chia-HaoYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667702
File:
PDF, 717 KB
english, 2010