Dislocation density reduction through annihilation in...

Dislocation density reduction through annihilation in lattice-mismatched semiconductors grown by molecular-beam epitaxy

Sheldon, P., Jones, K. M., Al-Jassim, M. M., Yacobi, B. G.
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Volume:
63
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.340343
File:
PDF, 621 KB
english, 1988
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