Electron penetration depth in amorphous AlN exploiting the...

Electron penetration depth in amorphous AlN exploiting the luminescence of AlN:Tm/AlN:Ho bilayers

M. Maqbool, M.E. Kordesch, I. Ahmad
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Volume:
9
Year:
2009
Language:
english
Pages:
5
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2008.03.015
File:
PDF, 317 KB
english, 2009
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