Electron penetration depth in amorphous AlN exploiting the luminescence of AlN:Tm/AlN:Ho bilayers
M. Maqbool, M.E. Kordesch, I. AhmadVolume:
9
Year:
2009
Language:
english
Pages:
5
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2008.03.015
File:
PDF, 317 KB
english, 2009