Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1997 / 5 Vol. 15; Iss. 3
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Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures ofSF[sub 6]/CHF[sub 3] gases
Grigoropoulos, S.Volume:
15
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.589306
Date:
May, 1997
File:
PDF, 763 KB
english, 1997