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Improvement of trench MOS barrier Schottky rectifier by using high-energy counter-doping trench-bottom implantation
M.-H. Juang, J. Yu, S.-L. JangVolume:
11
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.cap.2010.11.106
File:
PDF, 446 KB
english, 2011