Bipolar resistive switching characteristics of atomic layer...

Current Applied Physics 2011 Vol. 11; Iss. 3

Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application

Lin Chen, Qing-Qing Sun, Jing-Jing Gu, Yan Xu, Shi-Jin Ding, David Wei Zhang
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Volume:
11
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.cap.2010.12.005
File:
PDF, 485 KB
english, 2011
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