Optimization of modulation-doped Ga1−xInxAs/InP...

Journal of Applied Physics 1993 Vol. 73; Iss. 9

Optimization of modulation-doped Ga1−xInxAs/InP heterostructures towards extremely high mobilities

Hardtdegen, Hilde, Meyer, R., Hollfelder, M., Schäpers, Th., Appenzeller, J., Lo̸ken-Larsen, Hilde, Klocke, Th., Dieker, Christel, Lengeler, B., Lüth, H., Jäger, W.
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Volume:
73
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.352789
File:
PDF, 1.00 MB
english, 1993
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