Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing
Schubert, Ch., Kaiser, U., Hedler, A., Wesch, W., Gorelik, T., Glatzel, U., Kräußlich, J., Wunderlich, B., Heß, G., Goetz, K.Volume:
91
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1430539
File:
PDF, 779 KB
english, 2002