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Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy
Grützmacher, D., Meyer, R., Balk, P., Berg, C., Schäpers, T., Lüth, H., Zachau, M., Koch, F.Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343540
File:
PDF, 1.03 MB
english, 1989