Hydrogenated silicon nitride thin films deposited between 50 and 250 °C using nitrogen/silane mixtures with helium dilution
Klein, Tonya M., Anderson, Timothy M., Chowdhury, Ashfaqul I., Parsons, Gregory N.Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.582104
File:
PDF, 374 KB
english, 1999