X-ray analysis of temperature induced defect structures in...

Journal of Applied Physics 2002 Vol. 92; Iss. 7

X-ray analysis of temperature induced defect structures in boron implanted silicon

Sztucki, M., Metzger, T. H., Kegel, I., Tilke, A., Rouvière, J. L., Lübbert, D., Arthur, J., Patel, J. R.
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Volume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1505982
File:
PDF, 1.05 MB
english, 2002
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