[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Mass Production Worthy MIM Capacitor On Gate polysilicon(MIM-COG) Structure using HfO2/HfOxCyNz/HfO2 Dielectric for Analog/RF/Mixed Signal Application

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