[IEEE ICVC'99. 6th International Conference on VLSI and CAD - Seoul, South Korea (26-27 Oct. 1999)] ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) - Device characteristics and reliability for 0.18 μm MOSFET with 20 Å gate oxide formed by RTO
Jeong-Hwan Yang,, Dae-Rim Kang,, Seong-Ho Kwak,, Su-Cheol Lee,, Young-Wug Kim,, Kwang Pyuk Suh,Year:
1999
Language:
english
DOI:
10.1109/icvc.1999.820897
File:
PDF, 308 KB
english, 1999