Unified model for breakdown in thin and ultrathin gate...

Journal of Applied Physics 1999 Vol. 86; Iss. 9

Unified model for breakdown in thin and ultrathin gate oxides (12–5 nm)

Kamoulakos, George, Kelaidis, Christine, Papadas, Constantin, Vincent, Emmanuel, Bruyere, Sylvie, Ghibaudo, Gerard, Pananakakis, Georges, Mortini, Patrick, Ghidini, Gabriella
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Volume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.371489
File:
PDF, 423 KB
english, 1999
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