A new approach in impurity doping of 4H-SiC using...

A new approach in impurity doping of 4H-SiC using silicidation

Tin, Chin-Che, Mendis, Suwan, Tin, Michelle T., Isaacs-Smith, Tamara, Williams, John R.
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Volume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4854816
File:
PDF, 724 KB
english, 2013
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