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Contactless electroreflectance of InAs∕In[sub 0.53]Ga[sub 0.23]Al[sub 0.24]As quantum dashes grown on InP substrate: Analysis of the wetting layer transition
Kudrawiec, R., Motyka, M., Misiewicz, J., Somers, A., Schwertberger, R., Reithmaier, J. P., Forchel, A., Sauerwald, A., Kümmell, T., Bacher, G.Volume:
101
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2405233
File:
PDF, 385 KB
english, 2007