The evolution of vacancy-type defects in...

Journal of Applied Physics 2011 Vol. 110; Iss. 1

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Coleman, P. G., Nash, D., Edwardson, C. J., Knights, A. P., Gwilliam, R. M.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3605487
File:
PDF, 454 KB
english, 2011
Conversion to is in progress
Conversion to is failed