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Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy
Kudo, Makoto, Mishima, TomoyoshiVolume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.360265
File:
PDF, 771 KB
english, 1995