[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - On the evolution of the recoverable component of the SiON, HfSiON and HfO2 P-MOSFETs under dynamic NBTI
Gao, Y., Boo, A. A., Teo, Z. Q., Ang, D. S.Year:
2011
Language:
english
DOI:
10.1109/irps.2011.5784609
File:
PDF, 331 KB
english, 2011