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[IEEE 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009) - Xi'an (2009.12.25-2009.12.27)] 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Superior contact properties of trench filled contact for 3D MOSFET
Jae-Hyun Jung,, Heon-Bok Lee,, Jong-Bong Ha,, Hee-Sung Kang,, Jung-Hee Lee,, Sung-Ho Hahm,Year:
2009
Language:
english
DOI:
10.1109/edssc.2009.5394214
File:
PDF, 6.34 MB
english, 2009