Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1992 / 7 Vol. 10; Iss. 4
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Analysis of passivating oxide and surface contaminants on GaAs (100) by temperature-dependent and angle resolved x-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry
Schröder, F.Volume:
10
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.585858
Date:
July, 1992
File:
PDF, 689 KB
english, 1992