Dependence of burn-in effect on thermal annealing of the...

Applied Physics Letters 2003 Vol. 82; Iss. 17

Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors

Mimila-Arroyo, J., Cabrera, V., Bland, S. W.
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Volume:
82
Year:
2003
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1570512
File:
PDF, 233 KB
english, 2003
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