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[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs
Tyaginov, Stanislav, Bina, Markus, Franco, Jacopo, Wimmer, Yannick, Osintsev, Dmitri, Kaczer, Ben, Grasser, TiborYear:
2014
Language:
english
DOI:
10.1109/sispad.2014.6931570
File:
PDF, 759 KB
english, 2014