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Electron distribution in pseudomorphic Al0.30Ga0.70As/ In0.15Ga0.85As/GaAs δ-doped heterostructures
Fernández, J. M., Lazzouni, M. E., Sham, L. J., Wieder, H. H.Volume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354916
File:
PDF, 1.09 MB
english, 1993